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  • Nano Express
  • Open Access

Synthesis of SnS nanocrystals by the solvothermal decomposition of a single source precursor

Nanoscale Research Letters20072:144

  • Received: 29 November 2006
  • Accepted: 5 February 2007
  • Published:


SnS nanocrystals (NCs) were synthesized from bis(diethyldithiocarbamato) tin(II) in oleylamine at elevated temperature. High-resolution transmission electron microscopy (HRTEM) investigation and X-ray diffraction (XRD) analysis showed that the synthesized SnS particles are monocrystalline with an orthorhombic structure. The shape and size tunability of SnS NCs can be achieved by controlling the reaction temperature and time, and the nature of the stabilizing ligands. The comparison between experimental optical band gap values shows evidence of quantum confinement of SnS NCs. Prepared SnS NCs display strong absorption in the visible and near-infrared (NIR) spectral regions making them promising candidates for solar cell energy conversion.


  • Tin sulfide
  • Collodal nanocrystals
  • Chemical synthesis
  • Optical properties
  • Solar energy conversion




This work was supported by the Vanderbilt Institute of Nanoscale Science and Engineering and DOE grant # DE-FG02-02ER45957.

Authors’ Affiliations

Department of Chemistry, Vanderbilt University, Station B 351822, Nashville, TN 37235, USA
Vanderbilt Institute of Nanoscale Science and Engineering, Vanderbilt University, Station B 350106, Nashville, TN 37235, USA


  1. Rudel H: Ecotoxicol. Environ. Saf. 2003, 56: 180. COI number [1:CAS:528:DC%2BD3sXmt1Wqu7s%3D] 10.1016/S0147-6513(03)00061-7View ArticleGoogle Scholar
  2. Winship KA: Adverse Drug React. Acute. Poisoning. Rev. 1988, 7: 19. Google Scholar
  3. Albers W, Haas C, van der Maesen F: Phys. Chem. Solid. 1960, 15: 306. COI number [1:CAS:528:DyaF3MXmvV2ruw%3D%3D] 10.1016/0022-3697(60)90253-5View ArticleGoogle Scholar
  4. El-Nahass MM, Zeyada HM, Aziz MS, El-Ghamaz NA: Opt. Mater. 2002, 20: 159. COI number [1:CAS:528:DC%2BD38XnsVais7w%3D] 10.1016/S0925-3467(02)00030-7View ArticleGoogle Scholar
  5. Tanusevski A: Semicond. Sci. Technol. 2003, 18: 501. COI number [1:CAS:528:DC%2BD3sXlsV2ktLo%3D] 10.1088/0268-1242/18/6/318View ArticleGoogle Scholar
  6. Tanusevski A, Poelman D: Sol. Energy Mater. Sol. Cells. 2003, 80: 297. COI number [1:CAS:528:DC%2BD3sXot1OmsLk%3D] 10.1016/j.solmat.2003.06.002View ArticleGoogle Scholar
  7. Loferski JJ: J. Appl. Phys.. 1956, 27: 777. COI number [1:CAS:528:DyaG28Xos12mtg%3D%3D] 10.1063/1.1722483View ArticleGoogle Scholar
  8. Nair MTS, Nair PK: Semicond. Sci. Technol. 1991, 6: 132. COI number [1:CAS:528:DyaK3MXhtlelsr8%3D] 10.1088/0268-1242/6/2/014View ArticleGoogle Scholar
  9. Koteswara Reddy N, Ramakrishna Reddy KT: Thin Solid Films. 1998, 325: 4. COI number [1:CAS:528:DyaK1cXksVWrtL0%3D] 10.1016/S0040-6090(98)00431-3View ArticleGoogle Scholar
  10. Pramanik P, Basu PK, Biswas S: Thin Solid Films. 1987, 150: 269. COI number [1:CAS:528:DyaL2sXmtV2rsbY%3D] 10.1016/0040-6090(87)90099-XView ArticleGoogle Scholar
  11. Thangaraju B, Kaliannan P: J. Appl. Phys. D. 2000, 33: 1054. COI number [1:CAS:528:DC%2BD3cXjsVKntLs%3D] 10.1088/0022-3727/33/9/304View ArticleGoogle Scholar
  12. Zainal Z, Hussein MZ, Ghazali A: Sol. Energy Mater. Sol. Cells. 1996, 40: 347. COI number [1:CAS:528:DyaK28XktlShtLg%3D] 10.1016/0927-0248(95)00157-3View ArticleGoogle Scholar
  13. Perry D, Geanangel RA: Inorg. Chim. Acta.. 1975, 13: 185. COI number [1:CAS:528:DyaE2MXksFamtbo%3D] 10.1016/S0020-1693(00)90196-8View ArticleGoogle Scholar
  14. Bratspies GK, Smith JF, Hill JO, Magee RJ: Thermochim. Acta.. 1978, 27: 307. COI number [1:CAS:528:DyaE1MXkslOhtw%3D%3D] 10.1016/0040-6031(78)85046-1View ArticleGoogle Scholar
  15. Zhao Y, Zhang Z, Dang H, Liu W: Mater. Sci. Eng. B. 2004, B113: 175. COI number [1:CAS:528:DC%2BD2cXnvVKgt7k%3D] 10.1016/j.mseb.2004.08.003View ArticleGoogle Scholar
  16. Schlecht S, Kienle L: Inorg. Chem. 2001, 40: 5719. COI number [1:CAS:528:DC%2BD3MXms1Cjsrw%3D] 10.1021/ic0103852View ArticleGoogle Scholar
  17. An C, Tang K, Shen G, Wang C, Yang Q, Hai B, Qian Y: J. Cryst. Growth. 2002, 244: 333. COI number [1:CAS:528:DC%2BD38Xnt1Wks78%3D] 10.1016/S0022-0248(02)01613-5View ArticleGoogle Scholar
  18. An C, Tang K, Jin Y, Liu Q, Chen X, Qian Y: J. Cryst. Growth. 2003, 252: 581. COI number [1:CAS:528:DC%2BD3sXis1GrtLo%3D] 10.1016/S0022-0248(03)00961-8View ArticleGoogle Scholar
  19. Hu H, Yang B, Zeng J, Qian Y: Mater. Chem. Phys. 2004, 86: 233. COI number [1:CAS:528:DC%2BD2cXkt1CrtL8%3D] 10.1016/j.matchemphys.2004.04.001View ArticleGoogle Scholar
  20. Li Q, Ding Y, Wu H, Liu X, Qian Y: Mater. Res. Bull. 2002, 37: 925. COI number [1:CAS:528:DC%2BD38XktVWht70%3D] 10.1016/S0025-5408(02)00705-5View ArticleGoogle Scholar
  21. Greyson EC, Barton JE, Odom TW: Small. 2006, 2: 368. COI number [1:CAS:528:DC%2BD28Xhs1aqsL8%3D] 10.1002/smll.200500460View ArticleGoogle Scholar
  22. Malik M, O’Brien P, Revaprasadu N: Phosphorus, Sulfur Silicon Relat. Elem. 2005, 180: 689. COI number [1:CAS:528:DC%2BD2MXivFeku7Y%3D] 10.1080/10426500590907426View ArticleGoogle Scholar
  23. Pickett NL, O’Brien P: Chemical Record. 2001, 1: 467. COI number [1:CAS:528:DC%2BD3MXptFCrtrw%3D] 10.1002/tcr.10002View ArticleGoogle Scholar
  24. Pradhan N, Katz B, Efrima S: J. Phys. Chem. B. 2003, 107: 13843. COI number [1:CAS:528:DC%2BD3sXptVKnt78%3D] 10.1021/jp035795lView ArticleGoogle Scholar
  25. Masala O, Seshadri R: Annu. Rev. Mater. Res. 2004, 34: 41. COI number [1:CAS:528:DC%2BD2cXmvVOju74%3D] 10.1146/annurev.matsci.34.052803.090949View ArticleGoogle Scholar
  26. Hines MA, Scholes GD: Adv. Mater. 2003, 15: 1844. COI number [1:CAS:528:DC%2BD3sXpt1ylsrg%3D] 10.1002/adma.200305395View ArticleGoogle Scholar
  27. Yu WW, Peng X: Angew. Chem. Int. Ed. 2002, 41: 2368. COI number [1:CAS:528:DC%2BD38XlsVyqtrs%3D] 10.1002/1521-3773(20020703)41:13<2368::AID-ANIE2368>3.0.CO;2-GView ArticleGoogle Scholar
  28. Mirkovic T, Hines MA, Nair PS, Scholes GD: Chem. Mater. 2005, 17: 3451. COI number [1:CAS:528:DC%2BD2MXksVers7Y%3D] 10.1021/cm048064mView ArticleGoogle Scholar
  29. Cho KS, Talapin DV, Gaschler W, Murray CB: J. Am. Chem. Soc. 2005, 127: 7140. COI number [1:CAS:528:DC%2BD2MXjs1Sisb8%3D] 10.1021/ja050107sView ArticleGoogle Scholar
  30. J. Bardeen, F.J. Blatt, L.H. Hall, ed. by R. Breckenridge, B. Russel, T. Hahn, Proc. of Photoconductivity Conference (Wiley, New York, 1956)Google Scholar
  31. Lambros AP, Geraleas D, Economou NA: J. Phys. Chem. Solids. 1974, 35: 537. COI number [1:CAS:528:DyaE2cXhtlyqsr8%3D] 10.1016/S0022-3697(74)80008-9View ArticleGoogle Scholar
  32. Alivisatos AP: J. Phys. Chem. 1996, 100: 13226. COI number [1:CAS:528:DyaK28Xkt1agu7o%3D] 10.1021/jp9535506View ArticleGoogle Scholar
  33. Brus L: J. Phys. Chem. 1986, 90: 2555. COI number [1:CAS:528:DyaL28XktFagtr0%3D] 10.1021/j100403a003View ArticleGoogle Scholar


© to the authors 2007