Figure 2From: Transient Photoinduced Absorption in Ultrathin As-grown Nanocrystalline Silicon FilmsNormalized transient PA measurements for the nanocrystalline silicon films with thickness (a) 5 nm, (b) 15 nm, and (c) 30 nm. The samples were excited at 3.1 eV and probed at different probing wavelength ranging from 400 to 980 nmBack to article page