Figure 3From: Transient Photoinduced Absorption in Ultrathin As-grown Nanocrystalline Silicon FilmsNormalized transient PA measurements for the nanocrystalline silicon films with thickness varied from 5 to 30 nm. The samples were excited at 3.1 eV and probed at 450 nm (2.75 eV) with 100 fs pulsesBack to article page