Figure 3From: A Novel Self-aligned and Maskless Process for Formation of Highly Uniform Arrays of Nanoholes and NanopillarsSEM images of (a) a single layer of microspheres (0.97 μm diameter) on top of photoresist; (b) AZ5214 photoresist nanoholes after microsphere removal and photoresist development; (c) high aspect-ratio cross-section of nanopatterns formed by silica spheres and AZ5214 photoresist; (d) Shipley 1805 photoresist used as negative photoresist to form nanopillars of photoresistBack to article page