Figure 1From: Surface-Related States in Oxidized Silicon Nanocrystals Enhance Carrier Relaxation and Inhibit Auger RecombinationDegenerate time-resolved absorption measurements of (a) 2.8 nm Si-NCs (b) 5 nm ultrathin nanocrystalline silicon film. The insets show the percentage of the absorbed incident energy by the sample over the range of excitation 3.1–4.2 eVBack to article page