Figure 3From: First-Principles Study of the Band Gap Structure of Oxygen-Passivated Silicon NanonetsBand gap structure ofa 100D5B5W2P37H (VBM: X or G, CBM: G, Eg: 1.28 eV),b 100D5B5W2P37O (VBM: M, CBM: M, Eg: 0.59 eV)Back to article page