Figure 2From: Low Temperature Growth of In2O3and InN Nanocrystals on Si(111) via Chemical Vapour Deposition Based on the Sublimation of NH4Cl in InXRD spectrum of In2O3NCs grown on Si(111) (i) by direct oxidation of In by Ar:10% O2at 1000 °C, i.e. CVD71, top pattern and (ii) by reaction of In with NH4Cl at 600 °C under a flow of N2i.e. CVD59, lower pattern. Enhanced In2O3peaks are obtained from the sample grown at the higher temperatureBack to article page