Figure 2From: Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography(Color online) Sequence of 1 μm × 1 μm horizontal crosscuts at heights (top tobottom panels)z= 8, 22, and 39 nm, with respect to the Si substrate level, for islands on a flat (left) and patterned (right) surface area. Thegray scale represents the local surface slope, while the Ge molar fraction is color codedBack to article page