Localized-Surface-Plasmon Enhanced the 357 nm Forward Emission from ZnMgO Films Capped by Pt Nanoparticles
© to the authors 2009
Received: 15 April 2009
Accepted: 26 May 2009
Published: 12 June 2009
The Pt nanoparticles (NPs), which posses the wider tunable localized-surface-plasmon (LSP) energy varying from deep ultraviolet to visible region depending on their morphology, were prepared by annealing Pt thin films with different initial mass-thicknesses. A sixfold enhancement of the 357 nm forward emission of ZnMgO was observed after capping with Pt NPs, which is due to the resonance coupling between the LSP of Pt NPs and the band-gap emission of ZnMgO. The other factors affecting the ultraviolet emission of ZnMgO, such as emission from Pt itself and light multi-scattering at the interface, were also discussed. These results indicate that Pt NPs can be used to enhance the ultraviolet emission through the LSP coupling for various wide band-gap semiconductors.
Due to their wide band-gap and high exciton binding energy, ZnO and its alloys are of considerable interest for applications as optoelectronic devices, such as short-wavelength light-emitting diode (LED) and laser diode (LD). Especially, the band-gap of Zn1−xMg x O alloys can be tuned from 3.3 to 4.2 eV by Mg incorporation with different contents, which suggests that Zn1−xMg x O has great potential for using as optoelectronic devices in deep ultraviolet (UV) region [1–3]. High optical quality ZnMgO thin films with the strong UV emission are necessary to utilize the aforementioned good properties of ZnMgO. Unfortunately, intrinsic defects of ZnMgO lead to a low UV emission efficiency, which hinders its application in light-emitting devices [1–3]. Therefore, how to control the influence of defect states and improve UV emission efficiency has become a major issue, and numerous studies have been conducted with it.
Recently, a significant enhancement of ZnO UV emission has been achieved by coating a continuous metal film on ZnO via surface-plasmon-polarization (SPP) coupling [4, 5]. In most of previous reports, metal-film-capped emitter structures were usually adopted, and light was emitted through substrates into the free space. For this backward geometry a transparent substrate is required, which restricts its wide applications. More recently, Cheng et al.  and Lu et al.  demonstrated that the enhancement of forward emission from ZnO can be achieved by localized-surface-plasmon (LSP) coupling through depositing Ag nanoparticles (NPs) on ZnO surface. However, Ag NPs can only show plasmon excitations at wavelengths longer than 400 nm, thus the energy match is not ideal for the coupling between Ag LSP and band-gap emission of ZnO (378 nm). In the case of Zn1− xMg x O, the coupling between Ag LSP and Zn1− xMg x O band-gap emission will become worse because of even larger difference in energy [8–11]. Fortunately, the LSP energy of Pt NPs can be tuned in a wide region from the deep-UV to visible region [12, 13], which provides the possibility of enhancing band-gap emission of Zn1− xMg x O via Pt LSP coupling. In this study, we report on using LSP of Pt NPs to enhance the band-gap emission of Zn1− xMg x O. A sixfold enhancement of the forward emission at 357 nm is obtained by capping Pt NPs on Zn1− xMg x O surface, indicating that the Pt LSP coupling is a promising method for improving UV emission of ZnO-based alloys.
The ZnMgO films were deposited on Al2O3 (001) substrates by radio-frequency (RF) magnetron co-sputtering from ZnO (99.99%) and MgO (99.99%) targets . The target-substrate distances are 8 and 12 cm for the ZnO and MgO targets, respectively. The sputtering chamber was evacuated to a base pressure of 1.0 × 10−5 Pa, and then filled with the working gas to a pressure of 1.0 Pa. Prior to deposition, the substrates were sequentially cleaned in the ultrasonic baths of acetone, ethanol and de-ionized water, and then blown dried with nitrogen gas. In this study, both RF powers applied to the ZnO and MgO targets were kept at a constant of 80 W, and sapphire substrates were held at 600 °C. To improve the crystallinity, the ZnMgO films were annealed in vacuum at 800 °C for 2 h. Finally, the Pt NPs were grown on the ZnMgO surface by sputtering deposition of Pt thin films followed by annealing. Annealing was performed by rapid thermal annealing (RTA) in N2 ambient at 800 °C for 3 min. The sizes of Pt NPs were controlled by varying Pt mass-thicknesses ranging from 2 to 8 nm.
The structures of the ZnO and ZnMgO films were studied by X-ray diffraction (XRD) inθ–2θ mode with a Bruker D8 diffractometer with a Cu Kα X-ray source. The morphologies of Pt NPs on SiO2substrates were investigated by a field emission scanning electron microscopy (FE-SEM, Hitachi S4800). Photoluminescence (PL) spectra were excited by using the 325 nm emission of He-Cd laser with the power of 30 mW and taken at room temperature (RT) by using a grating spectrometer and a photomultiplier tube (PMT) detector, and both excitation and detection were carried on the top of the samples. The optical transmittance and reflection spectra were measured as a function of incident photon wavelength at wavelengths between 200 and 800 nm from films deposited on the fused silica substrates using a Shimadzu UV-3101 spectrophotometer. The spectrophotometer was used in a double-beam mode with a bare substrate in the reference beam to obtain transmittance data through the film alone.
Results and Discussion
Another possible explanation for the PL enhancement factor would be an increase in extraction angle, since capping metal particles on an emitter surface may lead to light multi-scattering at the metal/emitter interface. To check this mechanism, the PL spectrum of the ZnMgO film capped by Ag NPs is also given in Fig. 5. Here, the Ag NPs with the similar morphology as the Pt NPs were prepared by annealing a 6 nm Ag layer deposited on a reference ZnMgO film. In Fig. 5, only about a 1.1-fold enhancement in peak PL intensity is observed from the Ag-capped ZnMgO film. Actually, from Fig. 4 one can see that the main extinction peak of Ag NPs on SiO2 substrate is located at 530 nm, which is far from the band-gap of ZnMgO (3.47 eV, 357 nm), and a minor peak at 360 nm as quadrupole extinction is a second-order effect . Thus, the resonance coupling between the Ag LSP and the band-gap emission of ZnMgO can be ignored safely [4–11], and the observed slight enhancement of PL intensity for the Ag-capped ZnMgO in Fig. 5 can be ascribed to a simple multi-scattering of light that occurred at the Ag/ZnMgO interface. Because of the similar morphology between the Ag and Pt NPs, for the Pt-capped ZnMgO film an emission enhancement resulting from multi-scattering is expected to be weaker also, e.g., ~1.1-fold. Therefore, the multi-scattering mechanism cannot explain the observed sixfold enhancement alone, and the larger enhancement of the UV emission from the Pt-capped ZnMgO film mainly be attributed to the resonance coupling between the Pt LSP and the band-gap emission of ZnMgO. This LSP-enhanced emission process can be described as follows. When the LSP energy of Pt NPs is matched with the band-gap of ZnMgO, the excitation of LSP is much faster than other recombination processes in ZnMgO because of the high density of states induced by LSP resonance. Consequently, most of the energy of excited states in ZnMgO is transferred into LSP [4–11]. After that, LSP can be scattered as a far field radiation by the Pt NPs [6, 7, 21]. Since the increase of scattering cross-section with particle size is much more significant than absorption cross-section, the particles with larger sizes will be favor to convert LSP into light . In fact, a sixfold enhancement of the ZnMgO band-gap emission was obtained by the LSP coupling using the Pt NPs with the size of 100 nm.
Theoretically, the enhancement factor Fp (Purcell factor) up to 103 orders of magnitude can be achieved when the SP energy of metal is well consistent with the excited states of emitters . However, only a sixfold enhancement of the band-gap emission of ZnMgO was observed in the present work. We propose that the achievement of the high enhancement ratio is restricted by the following factors. Firstly, a downward-going radiation cannot be prevented, leading to the energy loss of LSP . Secondly, the broad extinction peak of the Pt NPs is unfavored for the LSP coupling . Thirdly, since the Pt NPs have stronger extinction ability at 325 nm as seen from Fig. 4, the power of the excited laser dissipates partly on the surface of Pt/ZnMgO, which results in the less excited states in Pt/ZnMgO than the reference ZnMgO. Besides, several other factors, such as the Ohmic loss , non-radiative Forster energy transfer , lower SP radiative efficiency , may be responsible for the weakened enhancement. And also, for the three-layered structure (Pt/ZnMgO/Al2O3), power lost to the substrate waveguide mode may also be one of the reasons of the weakened enhancement . Actually, in recent reports, two to seven fold enhancements were usually attained by SP coupling [6, 7, 9, 27], except for few experiment results with enhancement ratios beyond tenfold [8, 10]. Noticeably, in our case, the enhancement ratio can be further improved by optimizing the process conditions. For example, the extinction peak can become narrower by controlling the uniformity and the mono-dispersion of Pt NPs . Additionally, the loss from the dissipation of the excited laser can be eliminated automatically for the LSP-enhanced electroluminescence in which the excited states are induced by electron injection.
In conclusion, the Pt NPs with different morphologies, corresponding to the LSP resonance position varying from deep-UV to visible region, have been prepared by annealing Pt thin films with various mass-thicknesses. The 357 nm forward emission of the ZnMgO film capped with the Pt NPs is enhanced by sixfold via the coupling between the Pt LSP and the band-gap emission of ZnMgO. Though the enhancement ratio is far away from the theoretical value, it would be very significant if a sixfold UV emission enhancement can be attained for a practical optical-electrical device. These results show that Pt NPs can be used to enhance the UV emission through the LSP coupling for various wide band-gap semiconductors, such as ZnMgO, AlN, AlGaN and so on.
This work was financially supported by the National Natural Science Foundation of China (Grant No. 50601025, 60876031) and the “863” project of China (2009AA03Z305). One of the authors (JBY) thanks the CAS Special Grant for Postgraduate Research, Innovation and Practice.
- Ozgur U, Alivov YI, Liu C, Teke A, Reshchikov MA, Dogan S, Avrutin V, Cho SJ, Morkoc H: J. Appl. Phys.. 2005, 98: 041301. Bibcode number [2005JAP....98d1301O] 10.1063/1.1992666View ArticleGoogle Scholar
- Hwang DK, Oh MS, Lim JH, Park SJ: J. Phys. D: Appl. Phys.. 2007, 40: R387. COI number [1:CAS:528:DC%2BD2sXhsVWis7%2FM]; Bibcode number [2007JPhD...40..387H] 10.1088/0022-3727/40/22/R01View ArticleGoogle Scholar
- Tampo H, Shibata H, Maejima K, Yamada A, Matsubara K, Fons P, Niki S, Tainaka T, Chiba Y, Kanie H: Appl. Phys. Lett.. 2007, 91: 261907. Bibcode number [2007ApPhL..91z1907T] 10.1063/1.2828031View ArticleGoogle Scholar
- Lai CW, An J, Ong HC: Appl. Phys. Lett.. 2005, 86: 251105. Bibcode number [2005ApPhL..86y1105L] 10.1063/1.1954883View ArticleGoogle Scholar
- Ni WH, An J, Lai CW, Ong HC, Xu JB: J. Appl. Phys.. 2006, 100: 026103. Bibcode number [2006JAP...100b6103N] 10.1063/1.2214603View ArticleGoogle Scholar
- Cheng PH, Li DS, Yuan ZZ, Chen PL, Yang DR: Appl. Phys. Lett.. 2008, 92: 041119. Bibcode number [2008ApPhL..92d1119C] 10.1063/1.2839404View ArticleGoogle Scholar
- Lu HF, Xu XL, Lu L, Gong MG, Liu YS: J. Phys.: Condens. Matter. 2008, 20: 472202. Bibcode number [2008JPCM...20U2202L] 10.1088/0953-8984/20/47/472202Google Scholar
- Okamoto K, Niki I, Shvartser A, Narukawa Y, Mukai T, Scherer A: Nat. Mater.. 2004, 3: 601. COI number [1:CAS:528:DC%2BD2cXntlGiur4%3D]; Bibcode number [2004NatMa...3..601O] 10.1038/nmat1198View ArticleGoogle Scholar
- Lu YC, Chen CY, Shen KC, Yeh DM, Tang TY, Yang CC: Appl. Phys. Lett.. 2007, 91: 183107. Bibcode number [2007ApPhL..91r3107L] 10.1063/1.2805034View ArticleGoogle Scholar
- Pompa PP, Martiradonna L, Della Torre A, Della Sala F, Manna L, De Vittorio M, Calabi F, Cingolani R, Rinaldi R: Nat. Nanotechnol.. 2006, 1: 126. COI number [1:CAS:528:DC%2BD28Xht1yjt7fI]; Bibcode number [2006NatNa...1..126P] 10.1038/nnano.2006.93View ArticleGoogle Scholar
- You JB, Zhang XW, Fan YM, Qu S, Chen NF: Appl. Phys. Lett.. 2007, 91: 231907. Bibcode number [2007ApPhL..91w1907Y] 10.1063/1.2822404View ArticleGoogle Scholar
- Langhammer C, Yuan Z, Zoric I, Kasemo B: Nano Lett.. 2006, 6: 833. COI number [1:CAS:528:DC%2BD28Xit1Orsb8%3D]; Bibcode number [2006NanoL...6..833L] 10.1021/nl060219xView ArticleGoogle Scholar
- Bigall NC, Hartling T, Klose M, Simon P, Eng LM, Eychmuller A: Nano Lett.. 2008, 8: 4588. COI number [1:CAS:528:DC%2BD1cXhtlemtrnM]; Bibcode number [2008NanoL...8.4588B] 10.1021/nl802901tView ArticleGoogle Scholar
- Minemoto T, Negami T, Nishiwaki S, Takakura H, Hamakawa Y: Thin Solid Films. 2000, 372: 173. COI number [1:CAS:528:DC%2BD3cXlvV2hsro%3D]; Bibcode number [2000TSF...372..173M] 10.1016/S0040-6090(00)01009-9View ArticleGoogle Scholar
- Wang P, Chen NF, Yin ZG, Dai RX, Bai YM: Appl. Phys. Lett.. 2006, 89: 202102. Bibcode number [2006ApPhL..89t2102W] 10.1063/1.2388254View ArticleGoogle Scholar
- Chen NF, Wang YT, He HJ, Lin LY: Phys. Rev. B. 1998, 54: 8516. Bibcode number [1996PhRvB..54.8516C] 10.1103/PhysRevB.54.8516View ArticleGoogle Scholar
- Ashrafi ABMA, Segawa Y: J. Vac. Sci. Technol. B. 2005, 23: 2030. COI number [1:CAS:528:DC%2BD2MXhtV2hsbvL] 10.1116/1.2050653View ArticleGoogle Scholar
- Kang CY, Chao CH, Shiu SC, Chou LJ, Chang MT, Lin GR, Lin CF: J. Appl. Phys.. 2007, 102: 073508. Bibcode number [2007JAP...102g3508K] 10.1063/1.2785942View ArticleGoogle Scholar
- Pillai S, Catchpole KR, Trupke T, Green MA: J. Appl. Phys.. 2007, 101: 093105. Bibcode number [2007JAP...101i3105P] 10.1063/1.2734885View ArticleGoogle Scholar
- Mooradian A: Phys. Rev. Lett.. 1969, 22: 185. COI number [1:CAS:528:DyaF1MXmt1aqsg%3D%3D]; Bibcode number [1969PhRvL..22..185M] 10.1103/PhysRevLett.22.185View ArticleGoogle Scholar
- Lakowicz JR: Anal. Biochem.. 2005, 337: 171. COI number [1:CAS:528:DC%2BD2MXhtVKiurc%3D] 10.1016/j.ab.2004.11.026View ArticleGoogle Scholar
- Neogi A, Lee CW, Everitt HO, Kuroda T, Tackeuchi A, Yablonvitch E: Phys. Rev. B. 2002, 66: 153305. Bibcode number [2002PhRvB..66o3305N] 10.1103/PhysRevB.66.153305View ArticleGoogle Scholar
- Barnes WL: J. Lightwave Technol.. 1999, 17: 2170. Bibcode number [1999JLwT...17.2170B] 10.1109/50.803008View ArticleGoogle Scholar
- Khurgin JB, Sun G, Soref RA: Appl. Phys. Lett.. 2008, 93: 021120. Bibcode number [2008ApPhL..93b1120K] 10.1063/1.2957989View ArticleGoogle Scholar
- Yeh DM, Huang CF, Lu YC, Chen CY, Tang TY, Huang JJ, Shen KC, Yang YJ, Yang CC: Appl. Phys. Lett.. 2007, 91: 063121. Bibcode number [2007ApPhL..91f3121Y] 10.1063/1.2768913View ArticleGoogle Scholar
- Cheng PH, Li DS, Yang DR: Opt. Express. 2008, 16: 8896. COI number [1:CAS:528:DC%2BD1cXotlCitLY%3D]; Bibcode number [2008OExpr..16.8896C] 10.1364/OE.16.008896View ArticleGoogle Scholar
- Kown MK, Kim JY, Kim BH, Park IK, Cho CY, Byeon CC, Park SJ: Adv. Mater.. 2008, 20: 1253. 10.1002/adma.200701130View ArticleGoogle Scholar