Figure 1From: Considerable Enhancement of Field Emission of SnO2Nanowires by Post-Annealing Process in Oxygen at High Temperaturea XRD patterns ofa as-grown and post-annealed SnO2nanowires atb 700 °C,c 850 °C, andd 1,000 °C, respectively.b The (101) diffraction peak ofa as-grown and post-annealed atb 700 °C,c 850 °C,d 900 °C,e 950 °C andf annealed at 1,000 °C, respectively, inset is the variation of the FWHM and the intensity of the peaks as a function of annealing temperatureBack to article page