Figure 4From: Study on Resistance Switching Properties of Na0.5Bi0.5TiO3Thin Films Using Impedance Spectroscopya Impedance spectra of the NBT memory device are represented by dashed lines. Impedance spectra simulated are represented bysolid lines, and the corresponding equivalent circuit models are shown in the insert.b Frequency dependence of the impedance spectra in the on state and off state.Solid symbols correspond to the high-resistance states andopen symbols correspond to low-resistance statesBack to article page