Figure 4From: Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit DislocationsPlan-view TEM showing TDs froma center,b edge of the IMF sample, andc center of the non-IMF sample for a 5 μm GaSb epilayer on a GaAs substrateBack to article page