Figure 3From: Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition TechniqueHistograms of the InAs quantum dots grown at 420 °C and InAs coverage of a 1.80 MLs, b 1.85 MLs, c 1.95 MLs showing variation of number of dots with lateral diameter. These histograms were created from 2 μm × 2 μm AFM imagesBack to article page