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Figure 2 | Nanoscale Research Letters

Figure 2

From: A Novel Method to Fabricate Silicon Nanowire p–n Junctions by a Combination of Ion Implantation and in-situ Doping

Figure 2

An illustration of how the p–n junction is formed in a Si NW. a An SEM image of a NW indicating the p- and n-regions. b The expected phosphorus and boron profiles in the NW. The P profile was simulated by TRIM code, while the B profile was taken from the SIMS measurements of similarly doped Si layers. As can be seen, according to our process, the P and B profiles should cross in the middle of the NW resulting in a depletion region 40 nm long

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