Figure 4From: A New Method for Lift-off of III-Nitride Semiconductors for Heterogeneous IntegrationMicroscopic images of the HF undercutting of a 300 × 300 μm GaN mesa with etching time of a 3 min, b 6 min, c 9 min, d 12 min, e 15 min, and f 18 min, respectivelyBack to article page