Figure 3From: Pores in n-Type InP: A Model System for Electrochemical Pore EtchingPotential drop U SCR: = I (R 1 + R 2) over the space-charge-region (SCR). Several lines correspond to different etching potentials in the aforementioned respective etching potential windows. The curves are constant after an initial nucleation phase and dependent on N D Back to article page