Pores in n-Type InP: A Model System for Electrochemical Pore Etching

Table 1 Pore wall thickness d _wall as measured from Fig. 2 is in good agreement with twice the value of the SCR width d _SCR, which has been calculated for * planar geometry and ** semispherical geometry

N _D/cm⁻³	d _wall/nm measured	2 d _SCR/nm* calculated	2 d _SCR/nm** calculated
1·10¹⁷	148	230	168
8·10¹⁷	94	62	55
3·10¹⁸	27	22	21