Figure 3
From: A Silicon Nanocrystal Schottky Junction Solar Cell produced from Colloidal Silicon Nanocrystals
a Current–voltage characteristic (I–V) of a Si NC photovoltaic device. The I–V characteristic of the device was recorded under 100 mW/cm2 AM 1.5 global conditions and shows 0.02% PCE and a fill factor of 0.26 with 0.148 mA/cm2 short circuit-current density and 0.51 V open-circuit voltage. b Incident photon-to-current efficiency (IPCE) spectrum of the Si NC photovoltaic device