Figure 4
From: Fabrication of Coaxial Si1−x Ge x Heterostructure Nanowires by O2 Flow-Induced Bifurcate Reactions
a The synchrotron XRD patterns of SiO x /Si1−x Ge x coaxial heterostructure nanowires. b TEM image and EDS profile in the radial direction of SiO x /Si1−x Ge x coaxial heterostructure nanowires. Inset is SEM image of the heterostructure nanowires. c TEM images measuring the thickness of core and shell as a function of time. Inset is schematic of the oxidation procedure. d Plot of the thickness of SiO x shell versus the oxidation time of Si1−x Ge x nanowires