Table 1 Growth conditions and fitting parameters for different GaAs NWs
From: Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment
Substrate | T (°C) | ϕ (deg) | λ s (nm) | θ sl | Δμ sl (meV) | λ f (nm) | θ fl | Δμ fl (meV) |
|---|---|---|---|---|---|---|---|---|
GaAs(111)B | 550 | 0 | 12 | 1.67 | 36.5 | 5,000 | 11.2 | 172 |
GaAs(211)A | 550 | 20 | 12 | 1.40 | 24.0 | 5,000 | 16.3 | 199 |