Figure 1

Cross-section and plane view SEM images of GaN undergoing anodization to generate nano-ELO GaN structures. a SEM image of the anodized alumina oxide on GaN coated with a SiO₂ film b SEM image after FIB to expose the transfer of the self-ordered patterned site on SiO₂ film with subsequent growth of GaN pillars from these nanopores on SiO₂c re-growth of a thin buffer GaN on the nanopores SiO₂ film d Lateral overgrowth to generate strain relaxed GaN template for subsequent growth of the multiple quantum wells and LEDs structures