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Figure 3 | Nanoscale Research Letters

Figure 3

From: High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors

Figure 3

a Measured (solid line) IDSVDS curves for fabricated Si nanoribbon FETs. (The dashed lines show the corresponding results obtained from the 2D numerical simulations). be show the channel cross-sections of the device, indicating the conduction current density contours for the ‘on’ state b at room temperature and c T = 150°C with VSUB = 0, and for the ‘off’ state d at room temperature and e T = 150°C with VSUB = 0

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