Figure 3
From: High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors
a Measured (solid line) IDS—VDS curves for fabricated Si nanoribbon FETs. (The dashed lines show the corresponding results obtained from the 2D numerical simulations). b–e show the channel cross-sections of the device, indicating the conduction current density contours for the ‘on’ state b at room temperature and c T = 150°C with VSUB = 0, and for the ‘off’ state d at room temperature and e T = 150°C with VSUB = 0