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Figure 4 | Nanoscale Research Letters

Figure 4

From: High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors

Figure 4

a Compensated IDSVDS curves with positive substrate bias (VSUB) of the device. The inset shows the substrate bias (VSUB) applied for the purpose of keeping the operation of the device constant for temperatures from 25 to 150°C. (The dashed lines show the corresponding results obtained from the 2D numerical simulations.) b and c show the channel cross-sections of the simulated device, indicating the conduction current density contours for the compensated b’on state’ and c’off state’ with VSUB = 15.1 V at T = 150°C

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