Skip to main content

Table 1 Critical lateral forces and values of μ determined from nanoscratch trace depths within GaN films on c- and a-axis sapphire substrates

From: Nanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire Substrates

Sample Normal load (µN) Coefficient of friction Lateral force (µN)
GaN C-plane 2,000 0.105 −91.3
GaN C-plane 4,000 0.105 −200.2
GaN A-plane 2,000 0.096 −100.6
GaN A-plane 4,000 0.188 −256.2