Table 1 Critical lateral forces and values of μ determined from nanoscratch trace depths within GaN films on c- and a-axis sapphire substrates
From: Nanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire Substrates
Sample | Normal load (µN) | Coefficient of friction | Lateral force (µN) |
|---|---|---|---|
GaN C-plane | 2,000 | 0.105 | −91.3 |
GaN C-plane | 4,000 | 0.105 | −200.2 |
GaN A-plane | 2,000 | 0.096 | −100.6 |
GaN A-plane | 4,000 | 0.188 | −256.2 |