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Figure 2 | Nanoscale Research Letters

Figure 2

From: Ordered Arrays of SiGe Islands from Low-Energy PECVD

Figure 2

AFM gradient images of a patterned area following the deposition of 2.8 nm of Ge at 600°C (a), 700°C (b) and 750°C (c). The growth rate was 0.1 nm s−1. At low temperature (a), we have formation of small SiGe 3D structures around pits. They are also observed at intermediate temperature (b), although in smaller quantity. At high temperature (c), only very few islands are formed which are not on the top of pits, and some pits appear to be uncapped with islands

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