Figure 3
From: Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation
S parameter as a function of the mean implantation depth: SiGe a “as grown” (full symbols); SiGe b annealed (open symbols). Continuous and dashes lines are VEPFIT simulations, while vertical dashed lines mark the position of interfaces (after Ref. [2])
