Table 1 Characteristics of the samples used in current measurements
From: Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation
Sample | Structurea | Thermal treatment |
|---|---|---|
SOI | 2 Si/147 SiO2/Si | As-received |
SiGe (a) | 50 Si0.64Ge0.36/10 Si/147 SiO2/Si | As-grown |
SiGe (b) | 50 Si0.64Ge0.36/10 Si/147 SiO2/Si | 33 min at 750°C |