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Table 1 Characteristics of the samples used in current measurements

From: Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation

Sample Structurea Thermal treatment
SOI 2 Si/147 SiO2/Si As-received
SiGe (a) 50 Si0.64Ge0.36/10 Si/147 SiO2/Si As-grown
SiGe (b) 50 Si0.64Ge0.36/10 Si/147 SiO2/Si 33 min at 750°C
  1. aThicknesses are given in nanometers. All samples were covered by a thin layer of natural oxide (~2 nm)