Figure 1From: Deep-level Transient Spectroscopy of GaAs/AlGaAs Multi-Quantum Wells Grown on (100) and (311)B GaAs Substrates a DLTS spectra of GaAs/AlGaAs multi-quantum well structures grown on (100) and (311)B GaAs substrates. The inset shows the peaks resolved by Laplace DLTS technique; b Activation energies of defect states EB1 and EB2 in (311)B samples as determined from the Arrhenius plotsBack to article page