Figure 2From: Deep-level Transient Spectroscopy of GaAs/AlGaAs Multi-Quantum Wells Grown on (100) and (311)B GaAs SubstratesEmission rate signatures of each defect state; a Illustration of the bias dependence of the emission rates of E1; b Arrhenius plots obtained from the thermal emission rates at different junction fields; c Activation energy of trap E1 as a function of applied electric fieldBack to article page