Table 1 Sample description of vertical SiNWs analyzed by the CP-AFM technique
From: Conductive-probe atomic force microscopy characterization of silicon nanowire
Sample name | Growth temp. (°C) | Description | Post-annealing treatment | Nominal impurity concentration |
|---|---|---|---|---|
CD-08-001 | 500 | Undoped SiNWs/n-type Si (100) | - | Undoped |
CD-08-125 | 500 | Doped SiNWs/n-type Si (100) | 5 min at 750°C | [P] ≈ 1 × 1018 cm-3 |
CD-08-021 | 500 | Doped SiNWs/n-type Si (100) | 5 min at 750°C | [P] ≈ 1 × 1020 cm-3 |