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Table 1 Sample description of vertical SiNWs analyzed by the CP-AFM technique

From: Conductive-probe atomic force microscopy characterization of silicon nanowire

Sample name Growth temp. (°C) Description Post-annealing treatment Nominal impurity concentration
CD-08-001 500 Undoped SiNWs/n-type Si (100) - Undoped
CD-08-125 500 Doped SiNWs/n-type Si (100) 5 min at 750°C [P] ≈ 1 × 1018 cm-3
CD-08-021 500 Doped SiNWs/n-type Si (100) 5 min at 750°C [P] ≈ 1 × 1020 cm-3