Figure 2From: Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy SEMimages of GaN grating templates for the epitaxial growth of GaN. (a) 500-nm period, 300-nm-wide grating; (b) 500-nm period, 200-nm-wide grating; (c) 450-nm period, 200-nm-wide grating; (d) 400-nm period, 200-nm wide grating.Back to article page