Figure 4From: Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy SEM images of the resultant epitaxial gratings. (a) 500-nm period, 200-nm-wide grating; (b) 450-nm period, 200-nm-wide grating; (c) 400-nm period, 150-nm-wide grating; (d) 400-nm period, 250-nm-wide grating.Back to article page