Figure 1From: Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization Schematic representations. Schematic representations of an untreated HEMT device (a) and of a HEMT subjected to CHF3 plasma processing (b). I DS-V DS characteristics of HEMT device not subjected to the plasma treatment (squares) and subjected to the plasma treatment and to an annealing (triangles).Back to article page