Figure 4

Absorption spectra, Tauc plots, and relative linear fits. (a) Absorption spectra of SiGeO samples annealed at various temperatures (1 h, N₂ ambient), together with the spectrum of crystalline Ge [34]. Ion implantation (1.3 × 10¹⁴ Ge/cm², 600 keV, max Ge density lower than 0.01 at.%) was performed to induce the amorphization of Ge QDs. (b) Tauc plots (symbols) and relative linear fits (according to the reported law, lines) for the same samples and for a thin (120 nm) amorphous Ge film (color online).