Figure 1From: Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates SEM images of a monolayer graphene islands grown on the C-face of an 8° off-axis 4H-SiC substrate. (a, b) Images of the largest homogeneous SLEG islands, (c) early growth, (d) zoomed image with visible wrinkles, (e, f) example of starting nucleation point by a surface defect with step bunching clearly visible in (f).Back to article page