Figure 2From: Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC AFM images of the Al + -implanted and annealed 4H-SiC surface. (a) Sample annealed at 1700°C without a protective carbon capping layer. (b) Sample annealed at 1700°C with a protective carbon capping layer.Back to article page