Figure 2
From: Hf-based high-k materials for Si nanocrystal floating gate memories
XRD patterns and PL spectra of SRSO/SiO2 multilayers. (a) GI-XRD patterns measured for [2-nm-SRSO/SiO2]20 and [3-nm-SRSO/SiO2]20 multistacks annealed at 1,100°C for 60 min. Inset, PL spectra of the same MLs. The thickness of SRSO layer for each ML is mentioned in the figure. (b) PL properties of the [2-nm-SRSO/SiO2]20 ML versus annealing temperature; annealing time is 15 min.