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Figure 4 | Nanoscale Research Letters

Figure 4

From: Hf-based high-k materials for Si nanocrystal floating gate memories

Figure 4

C-V characteristics of annealed HfO 2 /SRSO/SiO 2 . C-V characteristics of HfO2/SRSO/SiO2 annealed at 800°C for 15 min (a, b) and at 950°C for 15 min (c, d) measured at 1 MHz (a, c) and versus frequency measured at 6 V sweep voltage (b, d). (e) The variation of ΔV fb versus sweep voltage for two annealing temperatures; (f) the comparison of C-V curves measured at 1 MHz versus annealing temperature. Annealing time is 15 min for all the figures.

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