Figure 3From: Study of the vertical transport in p-doped superlattices based on group III-V semiconductors Conductivity behavior for vertical transport in p -type GaN/Al 0.3 Ga 0.7 N SLs with barrier and well widths equal to 2 nm, as a function of (a) the acceptor concentration N 2D and (b) the Fermi energy E F .Back to article page