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Figure 1 | Nanoscale Research Letters

Figure 1

From: Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application

Figure 1

Cross-sectional HREM images of Ge + -implanted SiN/HfO 2 /SiO 2 stack layers. Cross-sectional HREM images of Ge+-implanted SiN layers with HfO2/SiO2 stack tunnel dielectrics at two different energies (a) 3 keV, and (b) 5 kev, with dose of 1.5 × 1016 cm-2, followed by a post-implantation thermal annealing at 800°C in N2. In the images, the surface of SiN layer is indicated by a white line

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