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Figure 2 | Nanoscale Research Letters

Figure 2

From: Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application

Figure 2

C-V characteristics of Ge + -implanted and subsequently annealed SiN/HfO 2 /SiO 2 stack layers. (a) High-frequency (500 kHz) C-V characteristics of Al/SiN/HfO2/SiO2/Si MIS structures with Ge-NCs embedded in the SiN layer with HfO2/SiO2 stack tunnel dielectrics stack layer implanted at two different energies of 3 and 5 keV, along with the control sample, (b) variation of memory window (calculated from flat-band shifts) as a function of absolute sweep voltage

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