Figure 4From: Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application Frequency dependent C-V hysteresis windows. The C - V hysteresis windows measured at various frequencies ranging from 10 kHz to 1 MHz for the two samples at a sweep voltage of ± 6 V. The observed memory windows maintain the same value of 3.95 and 0.72 V for the applied frequencies in samples A5 and A3, respectively.Back to article page