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Figure 5 | Nanoscale Research Letters

Figure 5

From: Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application

Figure 5

Evolution of flat-band voltage as a function of waiting time for the MIS structures after Ge + ion implantation at 5 keV followed by thermal annealing at 800°C and subjected to a stress voltages of +6 V for electron charging, and -6 V for hole charging for 3s. The constant-capacitance method at flat-band point was used for this measurement.

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