Figure 3From: Effect of annealing treatments on photoluminescence and charge storage mechanism in silicon-rich SiN x :H films FTIR transmission spectra of (a) as-deposited Si3N4/SRSN/SiO2 films, (b) sample S4 containing 33 at.% of silicon excess and annealed within the temperature range of 500-1100°C for 30 min in N2 ambient, (c) evolution of Si-N stretching band position of samples S1, S2, S3, and S4 as a function of annealing temperature.Back to article page