Figure 9From: Growth and characterization of gold catalyzed SiGe nanowires and alternative metal-catalyzed Si nanowires Young's moduli of GaN NW as a function of the NW radius. The error bar is estimated according to the following formula: ΔE/E = 3|Δa/a| + 4|Δr/r|. The dashed line represents the GaN bulk modulus in the [0001] direction.Back to article page