Figure 7From: Chemical characterization of extra layers at the interfaces in MOCVD InGaP/GaAs junctions by electron beam methods Sketch of the three possible mechanisms of atom rearrangement at the inverted GaAs-on-InGaP interface. 1): indium segregation in the growth direction, 2): P/As exchange across the interface, and 3): P/As intermixing in the growing GaAs QW (see text).Back to article page