Figure 6From: Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: a study by high-resolution STM and in situ RHEED STM images of the same region on the Si(001) surface: (a) empty states (+2.0 V, 100 pA) and (b) filled states (-2.0 V, 100 pA); an inset at (b) shows the image of the (2 × 1) surface between the rows of "rectangles".Back to article page