Table 1 Band parameters used in simulations (from [3, 26])
From: Theory and simulation of photogeneration and transport in Si-SiO x superlattice absorbers
Si | SiO x | |
---|---|---|
| 0.3 | 0.3 |
| 0.98 | 0.4 |
| 0.19 | 0.4 |
| 0.16 | 0.4 |
| 0.49 | 0.4 |
E g , Γ v - Γ c (eV) | 3.5 | 5.5 |
E g , Γ v - X (eV) | 1.1 | 3.1 |