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Table 1 Band parameters used in simulations (from [3, 26])

From: Theory and simulation of photogeneration and transport in Si-SiO x superlattice absorbers

 

Si

SiO x

0.3

0.3

0.98

0.4

0.19

0.4

0.16

0.4

0.49

0.4

E g , Γ v - Γ c (eV)

3.5

5.5

E g , Γ v - X (eV)

1.1

3.1

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