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Table 1 Summary of HVPE growth conditions for GaN NWs carried out on 0.5 nm Au/Si(001) at T = 900°C for 60 min via the reaction of Ga with 20 sccms of NH3 and N2:(10-100%) H2

From: Gallium hydride vapor phase epitaxy of GaN nanowires

  N2 (sccm) H2 (sccm) H2 (%) L(μm)
CVD817 90 10 10 2.3
CVD818 40 10 20 3.4
CVD819 23 10 30 4.2
CVD821 15 10 40 4.7
CVD822 10 10 50 5.2
CVD823 - 100 100 11.3
  1. Also listed are the average lengths of the GaN NWs.