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Table 1 Summary of HVPE growth conditions for GaN NWs carried out on 0.5 nm Au/Si(001) at T = 900°C for 60 min via the reaction of Ga with 20 sccms of NH₃ and N₂:(10-100%) H₂

From: Gallium hydride vapor phase epitaxy of GaN nanowires

	N₂ (sccm)	H₂ (sccm)	H₂ (%)	L(μm)
CVD817	90	10	10	2.3
CVD818	40	10	20	3.4
CVD819	23	10	30	4.2
CVD821	15	10	40	4.7
CVD822	10	10	50	5.2
CVD823	-	100	100	11.3

Also listed are the average lengths of the GaN NWs.

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