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Table 1 Summary of post-growth nitridation conditions for the conversion of In2O3 NWs to InN.

From: An investigation into the conversion of In2O3 into InN nanowires

(I) T N (°C)

(II) t(h)

(III) %H2

CVD797

500°C

CVD850

500°C, 3 h

CVD855

10

CVD788

600°C

CVD853

500°C, 6 h

CVD856

20

CVD790

800°C

CVD795

600°C, 1 h

CVD857

40

CVD791

900°C

CVD849

600°C, 2 h

CVD859

80

  

CVD848

600°C, 3 h

  
  1. Initially a flow of 500 sccm of Ar was introduced into the reactor after which the temperature was ramped to T N at 30°C/min under a flow of (I) 250 sccm of NH3, (II) 125 scmms of NH3 and (III) under different flows of NH3 and H2, but keeping the total flow constant at 200 sccm. Upon reaching T N, the same flows were maintained for 1 h at various temperatures (I), different nitridation times at 500 and 600°C (II) and for 1 h at 500°C (III).
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